Principal Electrical Engineer - Microwave Semicondicutor Device Modeling (116453BR)

  • Raytheon
  • Andover, Massachusetts, United States
  • 10/30/2018
Secret Engineering - Hardware / Software

Job Description

Location: Andover Massachusetts Security Clearance: Secret Principal / Sr Principal Microwave Semiconductor Device Modeling Engineer

An exciting opportunity currently exists for a semiconductor device modeling engineer to join our fast-paced microelectronics group. Raytheon’s Microelectronics Engineering & Technology (MET) Department develops, designs, and manufactures compound semiconductor devices, millimeter/microwave integrated circuits, and modules for defense and commercial applications.

Job Description

As a Principal / Senior Principal Electrical Engineer working with Raytheon’s GaAs and GaN technologies you will be responsible for the generation of active and passive models for products being developed in our III-V semiconductor foundry. These models will then be used by Raytheon’s MMIC Design team to create Monolithic Microwave Integrated Circuits (MMICs) for use in both commercial and defense electronic systems.

Responsibilities will include the following:

  • Design and layout of device modeling test structures and chips
  • Evaluation, use, and support of measurement and parameter extraction hardware and software
  • Definition and execution of device characterization test plans including static & pulsed I-V, C-V, CW & pulsed bias S-Parameter, load/source-pull, TOI, and noise measurements
  • Analyzing parametric test data, collecting and analyzing modeling device data, and extracting device models
  • Developing advanced device model formulations and model extraction algorithms
  • Releasing models into MMIC Process Design Kits (PDKs) in Keysight ADS, and publishing device model documentation and foundry design manuals
  • Assisting device and process engineers in analyzing and understanding the detailed performance of various semiconductor active and passive devices through direct measurement and/or TCAD simulation
  • Assisting EDA engineers in developing and testing MMIC PDKs in Keysight ADS
  • Work with MMIC Design Team to understand model limitations and opportunities for improvement
Required Skills
  • 8+ years of experience in compound semiconductor HEMT modeling
  • Hands-on experience with compound semiconductor device characterization (measurement setup and execution) such as static & pulsed I-V, C-V, CW & pulsed bias S-Parameter, load/source-pull, TOI, and noise measurements
  • Extensive hands-on experience with high-frequency (microwave/millimeter wave) and large-signal/high power test equipment such as Keysight or Anteverta NVNAs
  • Experience using statistical data analysis tools such as MATLAB, JMP or Excel
  • Experience with scripting languages in a Linux environment
Desired Skills
  • The ideal candidate will have an extensive background in III-V compound semiconductors as well as a thorough knowledge of the entire model development process including test structure design, parameter extraction, model validation, and preparation of model review packages.
  • Experience with:
    • Semiconductor device physics concepts with emphasis on compound semiconductor HEMTs
    • Basic network theory
    • Lumped element equivalent-circuit models for high-frequency transistor devices
    • Non-linear compact model parameter extraction and validation techniques Verilog-A behavioral modeling language and its use for compact model development including direct experience developing advanced device model formulations and model extraction algorithms
  • Excellent communication skills
  • Experience with multi-physics simulations including electromagnetics and thermal
  • Strong working knowledge of power amplifiers, low-noise amplifiers, and related circuits
  • Thorough understanding of III-V integrated circuit manufacturing processes and concepts
  • Direct experience with setup/development/use of Agilent IC-CAP, other commercial, and/or custom measurement and parameter extraction software
  • Experience with transistor models such as Angelov, EEHEMT, BSIM4, PSP, etc.
  • Experience with a wide range of semiconductor device technologies including Compound Semiconductor HEMTs and HBTs, CMOS/RFCMOS and SiGe BiCMOS
  • Experience with Perl/Python/etc. scripting languages
  • Experience with project management including project planning, task break down, milestone scheduling, etc.
  • Working knowledge of Keysight ADS including PDK infrastructure
  • Ability to obtain a Security Clearance
Required Education
  • BS in Electrical Engineering or Applied Physics or other related Engineering discipline. MS degree preferred.
The Position can be Principal (G10) or Senior Principal (G11) depending on a candidates experience and qualifications.

This position requires the eligibility to obtain a security clearance. Except in rare circumstances, only U.S. citizens are eligible for a security clearance.

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116453

Raytheon is an Equal Opportunity/Affirmative Action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, creed, sex, sexual orientation, gender identity, national origin, disability, or protected Veteran status.


Headquartered in Tewksbury, Massachusetts, IDS has 32 locations around the world. Its broad portfolio of weapons, sensors and integration systems supports its customer base across multiple mission areas, including air and missile defense systems; missile defense radars; early warning radars; naval ship operating systems; C5ITM products and services; and other advanced technologies. IDS provides affordable, integrated solutions to a broad international and domestic customer base, including the U.S. Missile Defense Agency, the U.S. Armed Forces and the Department of Homeland Security. Electrical Engineering, Engineering, All, Integrated Defense Systems Massachusetts Opportunities Electrical Engineering
JBRaytheon Principal Electrical Engineer - Microwave Semicondicutor Device Modeling   JP2 ICJBMeta